APPARATUS AND METHODS FOR REFERENCE READ TECHNIQUES FOR THRESHOLD SELECTOR DEVICE MEMORY

原文（中文）

An apparatus includes memory array having a first memory cell including a first two-terminal element having first and second threshold voltages, a second memory cell including a second two-terminal element having third and fourth threshold voltages, and a control circuit coupled to the memory array. The control circuit is configured to cause the first two-terminal element to have the first threshold voltage, and cause the second two-terminal element to have either the third threshold voltage or the fourth threshold voltage, apply a third voltage signal that increases at a first ramp rate to the first memory cell and the second memory cell, determine that the first memory cell switches from a non-conducting state to a conducting state, and read the second memory cell using the third voltage signal a first predetermined delay time after the first memory cell switches from the non-conducting state to the conducting state.