MEMORY READ CALIBRATION BASED ON MEMORY DEVICE-ORIGINATED METRICS CHARACTERIZING VOLTAGE DISTRIBUTIONS

Original (Chinese)

Described are systems and methods for memory read calibration based on memory device-originated metrics. An example memory device includes: a memory array having a plurality of memory cells and a controller coupled to the memory array. The controller is to perform operations including: receiving a first value of a first metric indicative of a first quantity of data stored in a subset of memory cells associated with at least one non-conducting bitline; determining a first read voltage adjustment value; performing a read operation with respect to the subset of memory cells based on the first read voltage adjustment value; receiving a second value of a second metric indicative of a second quantity of data stored in the subset of memory cells associated with at least one non-conducting bitline; determining a second read voltage adjustment value; and applying the second read voltage adjustment value for reading the plurality of memory cells.