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案件記録

Heat Dissipation for Semiconductor Circuit

発明審査中
20請求項 · 3 独立
§ Ⅰ

案件概要

発明者

Sheng Zhang; Near Margalit; David John Kenneth Meadowcroft; Sukeshwar Kannan

IPC分類

H1L 23/367G2B 6/42H1L 21/48H1L 23/H1L 23/31H1L 23/373H1L 23/498H1L 23/538H1L 25/16

CPC分類

H1L23/3677G2B6/4269H1L23/373H1L24/29H1L24/32H1L25/167H1L21/4875H1L23/3128H1L23/49838H1L23/5385H1L24/16H1L24/73H1L2224/16225H1L2224/29005H1L2224/2919H1L2224/32225H1L2224/73204H1L2924/1815

The subject technology is directed to semiconductors and fabrication methods thereof. The subject technology provides a first circuit, a die attach film coupled to a bottom side of the first circuit, and a heat spreader layer coupled between the first circuit and the die attach film. In some cases, the heat spreader layer is directly coupled to at least one of the first circuit or the die attach film. In some cases, the first layer or the die attach film is non-conductive. The heat spreader layer can be configured to dissipate heat laterally along a side of the first circuit. There are other embodiments as well.

原文(中国語)

The subject technology is directed to semiconductors and fabrication methods thereof. The subject technology provides a first circuit, a die attach film coupled to a bottom side of the first circuit, and a heat spreader layer coupled between the first circuit and the die attach film. In some cases, the heat spreader layer is directly coupled to at least one of the first circuit or the die attach film. In some cases, the first layer or the die attach film is non-conductive. The heat spreader layer can be configured to dissipate heat laterally along a side of the first circuit. There are other embodiments as well.

外部リソース