INNER SPACER AS ETCH STOP LAYER FOR BACKSIDE POWER RAIL
Dossier Overview
Applicant
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor
Ruilong Xie; Tao Li; HUIMEI ZHOU; Reinaldo Vega; Xiaoming Yang
IPC Classification
CPC Classification
Embodiments disclosed herein include a semiconductor structure. The semiconductor structure may include a deep via connecting a first source/drain (S/D) to a backside power rail (RB) below the first S/D, a dielectric etch stop inner spacer below the first S/D, and an RB sidewall surrounding the RB comprising an edge laterally overlapping the dielectric etch stop inner spacer.
Original (Chinese)
Embodiments disclosed herein include a semiconductor structure. The semiconductor structure may include a deep via connecting a first source/drain (S/D) to a backside power rail (RB) below the first S/D, a dielectric etch stop inner spacer below the first S/D, and an RB sidewall surrounding the RB comprising an edge laterally overlapping the dielectric etch stop inner spacer.
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