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ELASTIC WAVE DEVICE AND METHOD FOR MANUFACTURING THE SAME

发明专利审中
16权利要求 · 4 独立
§ Ⅰ

卷宗概要

发明人

Munehisa WATANABE; Hideki IWAMOTO; Hajime KANDO; Syunsuke KIDO

IPC 分类

H3H 9/2H3H 3/2H3H 3/4H3H 3/8H3H 3/10H3H 9/54H10N 30/1H10N 30/87

CPC 分类

H3H9/222H3H3/2H3H3/4H3H3/8H3H3/10H3H9/2574H3H9/2834H3H9/54H10N30/1H10N30/87H10N30/877H3H2003/23H3H2003/27Y10T29/42Y10T29/49005Y10T29/49155

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

原文(中文)

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.