MULTIGATE SEMICONDUCTOR DEVICES WITH VARIED THRESHOLD VOLTAGE CHARACTERISTICS

原文（中国語）

An example multigate semiconductor device with varied threshold voltages includes a channel, a source disposed on the channel, a drain disposed on the channel, a first gate disposed on the channel between the source and the drain, and a second gate disposed on the channel between the first gate and the drain. The first gate includes a first metal and the second gate includes a second metal, the second metal being different from the first metal.