Multigate Semiconductor Devices with Native Regions

原文（中国語）

An example multigate semiconductor device with varied threshold voltages includes a channel, a source disposed on the channel, a drain disposed on the channel, a first gate disposed on the channel between the source and the drain, a second gate disposed on the channel between the first gate and the drain, and/or a native region disposed below at least a portion of the channel. In some examples, the first gate comprises a first metal and the second gate comprises a second metal that is different from the first metal.