INTEGRATED CIRCUIT DEVICE INCLUDING A PERIPHERAL CIRCUIT AND METHOD OF MANUFACTURING THE SAME
Dossier Overview
Applicant
SAMSUNG ELECTRONICS CO., LTD.
Inventor
Hongwoo Seo; Hoil Bang; Junseong Song; Gyuhyun Kil; Hyunwoo Kim; Hwarang Kim
IPC Classification
CPC Classification
An integrated circuit device including a plurality of gate stacks disposed on a substrate and including a first gate stack and a second gate stack, a spacer disposed on sidewalls of each of the plurality of gate stacks, a plurality of source/drain areas disposed in an upper portion of the substrate and at sides of the plurality of gate stacks, an active area disposed in the upper portion of the substrate and between adjacent source/drain areas of the plurality of source/drain areas, a channel semiconductor layer disposed between the active area and the second gate stack among the plurality of gate stacks.
Original (Chinese)
An integrated circuit device including a plurality of gate stacks disposed on a substrate and including a first gate stack and a second gate stack, a spacer disposed on sidewalls of each of the plurality of gate stacks, a plurality of source/drain areas disposed in an upper portion of the substrate and at sides of the plurality of gate stacks, an active area disposed in the upper portion of the substrate and between adjacent source/drain areas of the plurality of source/drain areas, a channel semiconductor layer disposed between the active area and the second gate stack among the plurality of gate stacks.
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