SOLID PHASE EPITAXY OF AMORPHOUS SEMICONDUCTOR OVER A CRYSTALLINE SUBSTRATE
Dossier Overview
Applicant
TEXAS INSTRUMENTS INCORPORATED
Inventor
Haowen Bu; Umamaheswari Aghoram; Jonathan Lewis; Xiangyu Zhu; Majid Movahed Mansoori
IPC Classification
CPC Classification
A semiconductor device comprises a semiconductor substrate, a first crystalline silicon layer over the semiconductor substrate, an electronic component extending into the first crystalline silicon layer, a second crystalline silicon layer over the electronic component and the first crystalline silicon layer, and a layer of distributed silicon oxide inclusions between the first crystalline silicon layer and the second crystalline silicon layer.
Original (Chinese)
A semiconductor device comprises a semiconductor substrate, a first crystalline silicon layer over the semiconductor substrate, an electronic component extending into the first crystalline silicon layer, a second crystalline silicon layer over the electronic component and the first crystalline silicon layer, and a layer of distributed silicon oxide inclusions between the first crystalline silicon layer and the second crystalline silicon layer.
External Resources