SEMICONDUCTOR DEVICES WITH INSULATION FEATURES
Dossier Overview
Applicant
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor
Tzu-Ging Lin; Yun-Chen Wu; Bing-Hung Chen
IPC Classification
CPC Classification
Semiconductor devices with insulation structures and methods of fabrication are provided. A semiconductor device includes a first fin structure located over a substrate; a first gate segment located over the first fin structure; a second fin structure located over the substrate; a second gate segment located over the second fin structure; and an insulation feature located between the first fin structure and the second fin structure and located between the first gate segment and the second gate segment, wherein the insulation feature extends laterally from a first sidewall nearest the first gate segment to a second sidewall nearest the second gate segment; wherein the insulation feature includes a bottom layer and a top layer located over the bottom layer; and wherein the top layer forms an uppermost surface of the insulation feature.
Original (Chinese)
Semiconductor devices with insulation structures and methods of fabrication are provided. A semiconductor device includes a first fin structure located over a substrate; a first gate segment located over the first fin structure; a second fin structure located over the substrate; a second gate segment located over the second fin structure; and an insulation feature located between the first fin structure and the second fin structure and located between the first gate segment and the second gate segment, wherein the insulation feature extends laterally from a first sidewall nearest the first gate segment to a second sidewall nearest the second gate segment; wherein the insulation feature includes a bottom layer and a top layer located over the bottom layer; and wherein the top layer forms an uppermost surface of the insulation feature.
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