CFET Structure and Method of Fabricating a CFET Structure

原文（中文）

The disclosure relates to a complementary field effect transistor (CFET) structure. The CFET structure comprises: a vertical wall structure; a first transistor structure comprising one or more first channel layers; and a second transistor structure comprising one or more second channel layers, wherein the second transistor structure is stacked on the first transistor structure; wherein the first and the second transistor structure are arranged on one side of the vertical wall structure, and wherein the first and the second channel layers are in contact with a side surface of the vertical wall structure. The vertical wall structure comprises: a conductive core layer and a spacer layer which partially covers the conductive core layer on the side surface of the vertical wall structure, wherein the spacer layer has at least one opening to electrically connect the second transistor structure with the conductive core layer.