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기록

LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE

발명심사 중
2조회수
13청구항 · 4 독립항
§ Ⅰ

개요

발명자

Shunpei YAMAZAKI

IPC 분류

H10D 86/60G2F 1/1333G2F 1/1362G2F 1/1368G6F 3/41G6F 3/44G6F 3/45G9G 3/36H1L 21/2H10D 30/67H10D 86/40

CPC 분류

H10D86/60G2F1/13338G2F1/136286G2F1/1368G9G3/3677H1L21/2483H10D30/6706H10D30/6755H10D86/423H10D86/481G6F3/412G6F3/44G6F3/45G9G3/3648G9G2300/426G9G2310/4G9G2310/8G9G2320/214G9G2320/247G9G2320/43G9G2320/103G9G2330/21

To reduce power consumption and suppress display degradation of a liquid crystal display device. To suppress display degradation due to an external factor such as temperature. A transistor whose channel formation region is formed using an oxide semiconductor layer is used for a transistor provided in each pixel. Note that with the use of a high-purity oxide semiconductor layer, off-state current of the transistor at a room temperature can be 10 aA/μm or less and off-state current at 85° C. can be 100 aA/μm or less. Consequently, power consumption of a liquid crystal display device can be reduced and display degradation can be suppressed. Further, as described above, off-state current of the transistor at a temperature as high as 85° C. can be 100 aA/μm or less. Thus, display degradation of a liquid crystal display device due to an external factor such as temperature can be suppressed.

원문 (중국어)

To reduce power consumption and suppress display degradation of a liquid crystal display device. To suppress display degradation due to an external factor such as temperature. A transistor whose channel formation region is formed using an oxide semiconductor layer is used for a transistor provided in each pixel. Note that with the use of a high-purity oxide semiconductor layer, off-state current of the transistor at a room temperature can be 10 aA/μm or less and off-state current at 85° C. can be 100 aA/μm or less. Consequently, power consumption of a liquid crystal display device can be reduced and display degradation can be suppressed. Further, as described above, off-state current of the transistor at a temperature as high as 85° C. can be 100 aA/μm or less. Thus, display degradation of a liquid crystal display device due to an external factor such as temperature can be suppressed.