半导体集成电路装置
设置有与多个单元行(CR)相邻且包含电源分接部(TAP)的电源分接行(CRT)。单元(C1)包括在俯视时重叠的晶体管、形成在BM0层的VDD电源布线(21)以及形成在M0层的VSS电源布线(11)。电源分接部(TAP)包括形成在BM0层的VSS电源布线(22)、形成在M0层的VSS电源布线(12)以及将VSS电源布线(12、22)连接起来的连接结构。单元(C1)的X方向尺寸大于形成在BM1层的VSS电源布线(24)的布置间距。
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