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一种相位移空白光罩基板缺陷修补方法及修复材料
InventionUnknown
10Claims · 2 independent
§ Ⅰ
Dossier Overview
Inventor
蔡锦龙
Filing Date
Aug 20, 2026
Publication Date
Oct 16, 2026
IPC Classification
G03F 1/72 (2012.01)G03F 1/84 (2012.01)G03F 1/22 (2012.01)G03F 1/26 (2012.01)G03F 1/78 (2012.01)
本发明涉及空白光罩基板缺陷修复技术领域，尤其涉及一种相位移空白光罩基板缺陷修补方法及修复材料，通过DUV暗场干涉色差定位实现空白基板无标记缺陷分类，在同一密闭腔体内完成凸起铣削、凹坑修补与低温固化，采用双形态修复材料与界面改性助剂实现原位固相晶化。本发明解决了现有技术中定位难、工序割裂、膜层损伤大等问题，实现纳米级缺陷精准修复，修补层与基材光学性能匹配度＞95%，修复工时缩短90%，适用于面板、封装与半导体产业领域。
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