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A/M/X晶体材料、光伏器件及其制备方法
InventionUnknown
39Claims · 3 independent
§ Ⅰ
Dossier Overview
Inventor
苏硕剑; 刘召辉; 王燕东; 王言芬; 郭永胜; 陈国栋; 欧阳楚英
Filing Date
Dec 23, 2021
Publication Date
Oct 27, 2026
IPC Classification
H10K 30/50 (2023.01)H10K 71/00 (2023.01)H10K 85/50 (2023.01)H10K 71/60 (2023.01)H10K 71/40 (2023.01)H10K 71/12 (2023.01)
本申请提供了一种A/M/X晶体材料、光伏器件及其制备方法，包括光活性晶体材料层；光活性晶体材料层包括贯穿晶粒，贯穿晶粒为贯穿光活性晶体材料层的晶粒，贯穿晶粒的数量占光活性晶体材料层的总晶粒数量的百分比p≥80%；且光活性晶体材料层包括背光侧和背光晶粒，背光晶粒为暴露于背光侧的晶粒，背光晶粒具有暴露于背光侧的背光晶面；其中，背光侧的至少一个区域具有平均平坦系数R≤75。
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