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宽禁带半导体温度反馈补偿三维磁传感器高温、高频探头结构及其制作方法

InventionUnknown
10Claims · 2 independent
§ Ⅰ

Dossier Overview

Inventor

黄火林; 单文超

Filing Date

Apr 24, 2025

Publication Date

Oct 27, 2026

IPC Classification

H10N 52/00 (2023.01)H10N 52/01 (2023.01)H10N 52/85 (2023.01)H10N 30/85 (2023.01)H10N 30/30 (2023.01)H10N 30/03 (2023.01)G01R 33/07 (2006.01)

宽禁带半导体温度反馈补偿三维磁传感器高温、高频探头结构及其制作方法,属于半导体传感器技术领域,在衬底上依次生长缓冲层、外延层、势垒层,外延层和势垒层形成异质结结构层,二者接触界面由极化电荷诱导产生二维电子气,势垒层上方设置电极C1、电极C2、电极S1、电极S2、电极A1、电极A2,电极C1、电极C2、电极S1、电极S2、电极A1、电极A2均从衬底层上方延伸至异质结结构层,电极C1和电极C2对称设置,电极S1和电极S2对称设置,电极A1和电极A2对称设计,采用耐高温基板倒封装结构封装芯片,再将三个独立基板正交封装,使用焊料焊接到耐高温PCB探头上。本发明提高了三维霍尔传感器的使用温度范围、高频特性以及灵敏度。

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