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氮化物半导体多层膜反射镜的制造方法、垂直腔面发射激光器晶片及垂直腔面发射激光器
InventionUnknown
11Claims · 4 independent
§ Ⅰ
Dossier Overview
Inventor
三岛晃; 津田有三; 有田宗贵
Filing Date
Mar 19, 2025
Publication Date
Oct 27, 2026
IPC Classification
H01S 5/183 (2006.01)H01S 5/343 (2006.01)
在基板上层叠折射率互不相同的半导体层来制造半导体多层膜反射镜的方法中，基板为GaN基板，在基板上交替生长AlInN层及GaN层，AlInN的In组成为在室温下相对于GaN层产生晶格失配的18.9%～20.0%的范围内。
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