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Dossier

Near-Memory Random and Pattern-Based Number Generation

InventionPending
4views
20Claims · 3 independent
§ Ⅰ

Dossier Overview

Inventor

William Peter Ehrett; Nuwan S. Jayasena; Yasuko Eckert; Gabriel Hsiuwei Loh

IPC Classification

G6F 7/58

CPC Classification

G6F7/582

In aspects of near-memory random and pattern-based data generation, a system includes a number generator circuit configured to generate a sequence of numbers, a memory chip configured to store the sequence of numbers, and a memory interface configured to enable communication between the number generator circuit and the memory chip. In one or more implementations, the number generator circuit includes a random number generator circuit configured to generate the sequence of numbers as a sequence of random numbers. Additionally, or alternatively, the number generator circuit includes a pattern fill function configured to generate the sequence of numbers based on a pattern. In other aspects of near-memory random and pattern-based data generation, a memory device includes a base layer, a memory interface, and a number generator circuit interleaved among the base layer and the memory interface.

Original (Chinese)

In aspects of near-memory random and pattern-based data generation, a system includes a number generator circuit configured to generate a sequence of numbers, a memory chip configured to store the sequence of numbers, and a memory interface configured to enable communication between the number generator circuit and the memory chip. In one or more implementations, the number generator circuit includes a random number generator circuit configured to generate the sequence of numbers as a sequence of random numbers. Additionally, or alternatively, the number generator circuit includes a pattern fill function configured to generate the sequence of numbers based on a pattern. In other aspects of near-memory random and pattern-based data generation, a memory device includes a base layer, a memory interface, and a number generator circuit interleaved among the base layer and the memory interface.

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