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案件記録

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

発明審査中
2閲覧数
20請求項 · 2 独立
§ Ⅰ

案件概要

IPC分類

H1L 21/2H1L 21/66

CPC分類

H1L21/2016H1L21/2054H1L21/2345H1L22/12

A substrate processing method includes: performing a backside film forming operation that forms a backside film on a back surface of a substrate, wherein the substrate includes a front surface on which a pattern or device structure is formed and the back surface opposite to the front surface, and wherein the backside film is configured to generate stress on the back surface of the substrate upon exposure; and performing an exposing operation that exposes at least a part of the backside film to reduce warpage of the substrate after the backside film forming operation.

原文(中国語)

A substrate processing method includes: performing a backside film forming operation that forms a backside film on a back surface of a substrate, wherein the substrate includes a front surface on which a pattern or device structure is formed and the back surface opposite to the front surface, and wherein the backside film is configured to generate stress on the back surface of the substrate upon exposure; and performing an exposing operation that exposes at least a part of the backside film to reduce warpage of the substrate after the backside film forming operation.

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