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Off Axis Laser-Based Surface Processing Operations for Semiconductor Wafers

InventionPending
2views
21Claims · 4 independent
§ Ⅰ

Dossier Overview

Inventor

Simon Bubel; Josephus Daniel Ferguson

IPC Classification

H1L 21/4H1L 21/268H1L 21/67

CPC Classification

H1L21/475H1L21/268H1L21/67092

Systems and methods for laser-based surface processing operations on a semiconductor wafer, such as a silicon carbide semiconductor wafer, are provided. In one example, a method includes providing a semiconductor workpiece having a surface. The method includes providing emission of one or more lasers to the surface of a semiconductor workpiece at a non-perpendicular incidence angle relative to the surface. The method includes imparting relative motion between the one or more lasers and the semiconductor workpiece while providing emission of the one or more lasers to the surface of the semiconductor workpiece at the non-perpendicular incidence angle.

Original (Chinese)

Systems and methods for laser-based surface processing operations on a semiconductor wafer, such as a silicon carbide semiconductor wafer, are provided. In one example, a method includes providing a semiconductor workpiece having a surface. The method includes providing emission of one or more lasers to the surface of a semiconductor workpiece at a non-perpendicular incidence angle relative to the surface. The method includes imparting relative motion between the one or more lasers and the semiconductor workpiece while providing emission of the one or more lasers to the surface of the semiconductor workpiece at the non-perpendicular incidence angle.

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