原始名称记载: Wolfspeed, Inc.

Described herein are systems and methods relating to inspecting semiconductor workpieces. In one example, the inspection system includes a first channel having a first imaging device configured to image the semiconductor workpiece on the workpiece using a first radiation source. The inspection system includes a second channel having a second imaging device configured to image the semiconductor workpiece on the workpiece holder using a second radiation source.

Semiconductor workpiece inspection systems are provided. In some examples, a semiconductor workpiece inspection system includes a radiation source configured to provide electromagnetic radiation to a semiconductor workpiece. In some implementations, the example semiconductor workpiece inspection system includes an imaging device configured to capture an image of at least a portion of the semiconductor workpiece. In some implementations, the radiation source is configured to provide the electromagnetic radiation such that the electromagnetic radiation is incident on a surface of the semiconductor workpiece at an incident angle relative to an axis normal to a major surface of the semiconductor workpiece that is in a range of about 45° to about 85°.

An example semiconductor workpiece imaging system includes an imaging device. The example semiconductor workpiece imaging system includes a workpiece holder operable to receive a semiconductor workpiece. The example semiconductor workpiece imaging system includes a fiducial structure having one or more fiducial markers. The one or more fiducial markers and at least a portion of the semiconductor workpiece are detectable in a plurality of different image modalities.

An example method includes obtaining a plurality of images of at least a portion of a semiconductor workpiece. Each of the plurality of images associated with exposing the at least a portion of the semiconductor workpiece to radiation at a different radiation intensity. The example method includes generating a composite workpiece image of at least a portion of the semiconductor workpiece based at least in part on the plurality of images.

Systems and methods for laser-based surface processing operations on a semiconductor wafer, such as a silicon carbide semiconductor wafer, are provided. In one example, a method includes providing a semiconductor workpiece having a surface. The method includes providing emission of one or more lasers to the surface of a semiconductor workpiece at a non-perpendicular incidence angle relative to the surface. The method includes imparting relative motion between the one or more lasers and the semiconductor workpiece while providing emission of the one or more lasers to the surface of the semiconductor workpiece at the non-perpendicular incidence angle.

Semiconductor devices comprise a semiconductor layer structure and a gate structure that comprises a high resistance portion and a low-resistance portion on the semiconductor layer structure. The high resistance portion of the gate structure comprises a first section that has a first resistance temperature coefficient and a second section that has a second resistance temperature coefficient that differs from the first resistance temperature coefficient.