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CHAMBER ARRANGEMENTS WITH OFFSET HEATER ELEMENT ARRAYS, SEMICONDUCTOR PROCESSING SYSTEMS, AND METHODS OF MAKING CHAMBER ARRANGEMENTS AND DEPOSITION MATERIAL LAYERS ONTO SUBSTRATES

发明专利审中
18权利要求 · 2 独立
§ Ⅰ

卷宗概要

发明人

Caleb Miskin; Robinson James; Nitin Choudhary; Bubesh Babu Jotheeswaran; Alexandros Demos; Nayna Khosla; Mitisha Surana; Han Ye; Wentao Wang; Ion Hong Chao; Fan Gao; Junwei Su

IPC 分类

H1L 21/67C23C 16/46

CPC 分类

H1L21/67115C23C16/46H1L21/67248

A chamber arrangement includes a chamber body, a substrate support, and an upper heater element array. The chamber body has injection and longitudinally opposite exhaust ends, the substrate support is arranged within the chamber body and supported therein for rotation about a rotation axis, and the upper heater element array is supported above the chamber body and include a laterally-inner first upper linear lamp and a laterally-inner second upper linear lamp. The laterally-inner first upper linear lamp is separated from the rotation axis by a first lateral spacing distance, the laterally-inner second upper linear lamp is separated from the rotation axis by a second lateral spacing distance, and one of the first lateral spacing distance and the second lateral spacing distance is greater than the other of the first lateral spacing distance the second lateral spacing distance. Semiconductor processing systems and material layer deposition methods are also described.

原文(中文)

A chamber arrangement includes a chamber body, a substrate support, and an upper heater element array. The chamber body has injection and longitudinally opposite exhaust ends, the substrate support is arranged within the chamber body and supported therein for rotation about a rotation axis, and the upper heater element array is supported above the chamber body and include a laterally-inner first upper linear lamp and a laterally-inner second upper linear lamp. The laterally-inner first upper linear lamp is separated from the rotation axis by a first lateral spacing distance, the laterally-inner second upper linear lamp is separated from the rotation axis by a second lateral spacing distance, and one of the first lateral spacing distance and the second lateral spacing distance is greater than the other of the first lateral spacing distance the second lateral spacing distance. Semiconductor processing systems and material layer deposition methods are also described.