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SEMICONDUCTOR DEVICE HAVING A POWER DISTRIBUTION LAYER

InventionPending
20Claims · 3 independent
§ Ⅰ

Dossier Overview

IPC Classification

H1L 23/528

CPC Classification

H1L23/5286H1L23/5283

A semiconductor device includes transistors disposed on a substrate; and interconnection layers disposed over the transistors. The interconnection layers include a lower interconnection layer and an upper interconnection layer disposed over the lower interconnection layer. The upper interconnection layer includes first patterns extending in parallel in a first direction; and second patterns disposed between the first patterns, and connecting the first patterns to each other in a second direction perpendicular to the first direction. The second patterns are arranged spaced apart from each other in the first direction, and arranged in a zigzag shape in the second direction.

Original (Chinese)

A semiconductor device includes transistors disposed on a substrate; and interconnection layers disposed over the transistors. The interconnection layers include a lower interconnection layer and an upper interconnection layer disposed over the lower interconnection layer. The upper interconnection layer includes first patterns extending in parallel in a first direction; and second patterns disposed between the first patterns, and connecting the first patterns to each other in a second direction perpendicular to the first direction. The second patterns are arranged spaced apart from each other in the first direction, and arranged in a zigzag shape in the second direction.

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