SEMICONDUCTOR MEMORY DEVICE HAVING STORAGE NODE CONTACT

Original (Chinese)

A semiconductor memory device includes a device isolation pattern defining first and second active sections, a first storage node pad on the first active section, a second storage node pad on the second active section, a word line extending across the first active section, a word-line capping pattern on the word line, a bit line crossing over the word line, a storage node contact on one side of the bit line and adjacent to the first storage node pad, and a pad separation pattern between the first and second storage node pads, wherein the storage node contact includes a contact metal pattern, and a contact diffusion barrier pattern surrounding a sidewall and a bottom surface of the contact metal pattern, wherein a bottom surface of the contact diffusion barrier pattern is rounded, and wherein the pad separation pattern contacts a top surface and a sidewall of the word-line capping pattern.