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DEVICE, METHOD AND SYSTEM TO PROVIDE HETEROGENEOUS MEMORY CIRCUIT STACKING

InventionPending
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20Claims · 3 independent
§ Ⅰ

Dossier Overview

Inventor

Abhishek Anil Sharma; Sagar Suthram; Wilfred Gomes; Tahir Ghani; Anand Murthy; Pushkar Ranade

IPC Classification

H10B 80/H1L 23/H1L 25/H1L 25/65H1L 25/18H10B 10/H10B 12/

CPC Classification

H10B80/H1L24/8H1L24/80H1L25/657H1L25/18H1L25/50H10B10/12H10B12/315H1L2224/8145H1L2224/80895H1L2224/80896H1L2924/1431H1L2924/1436H1L2924/1437

Techniques and mechanisms for an integrated circuit (IC) die structure to comprise heterogeneous active layers which are variously stacked in respective face-to-back arrangements. In an embodiment, three active layers each correspond to a different respective transistor type, wherein two active layers comprise transistors of respective memory arrays, and a third active layer comprises transistors of circuitry which is coupled to access the memory arrays. In another embodiment, hybrid bond structures are disposed between two of the active layers.

Original (Chinese)

Techniques and mechanisms for an integrated circuit (IC) die structure to comprise heterogeneous active layers which are variously stacked in respective face-to-back arrangements. In an embodiment, three active layers each correspond to a different respective transistor type, wherein two active layers comprise transistors of respective memory arrays, and a third active layer comprises transistors of circuitry which is coupled to access the memory arrays. In another embodiment, hybrid bond structures are disposed between two of the active layers.

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