INTEGRATED CIRCUIT STRUCTURES HAVING INTERNAL SPACER-LAST FOR UNIFORM GRID METAL GATE AND TRENCH CONTACT CUT
Dossier Overview
Applicant
Intel Corporation
Inventor
Leonard P. GULER; Marvin Y. PAIK; Aditi KHADILKAR; Charles H. WALLACE
IPC Classification
CPC Classification
Integrated circuit structures having internal spacer-last for uniform grid metal gate and trench contact cut are described. A structure includes a stack of horizontal nanowires. A gate structure is vertically around the stack of horizontal nanowires, the stack of horizontal nanowires extending laterally beyond the gate structure. An internal gate spacer is between vertically adjacent ones of the stack of horizontal nanowires and laterally adjacent to the gate structure. An internal spacer liner is intervening laterally between the internal gate spacer and the gate structure.
Original (Chinese)
Integrated circuit structures having internal spacer-last for uniform grid metal gate and trench contact cut are described. A structure includes a stack of horizontal nanowires. A gate structure is vertically around the stack of horizontal nanowires, the stack of horizontal nanowires extending laterally beyond the gate structure. An internal gate spacer is between vertically adjacent ones of the stack of horizontal nanowires and laterally adjacent to the gate structure. An internal spacer liner is intervening laterally between the internal gate spacer and the gate structure.
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