原始名称记载: SAMSUNG ELECTRONICS CO., LTD.

An image decoding method may include: obtaining, from a sequence parameter set of a bitstream, information indicating a plurality of first reference image lists for an image sequence including a current image; obtaining, from a group header of the bitstream, an indicator for a current block group including a current block in the current image; obtaining a second reference image list by modifying a first reference image list indicated by the indicator, from among the plurality of first reference image lists, into the second reference image list; and prediction-decoding a lower block of the current block based on a second reference image included in the second reference image list.

Provided is an image decoding method including determining a plurality of coding units in a chroma image by hierarchically splitting the chroma image, based on a split shape mode of blocks in the chroma image of a current image, and decoding the current image, based on the plurality of coding units in the chroma image. In this regard, the determining of the plurality of coding units in the chroma image may include, when a size or an area of a chroma block from among a plurality of chroma blocks to be generated by splitting a current chroma block in the chroma image is equal to or smaller than a preset size or a preset area, not allowing splitting of the current chroma block based on a split shape mode of the current chroma block, and determining at least one coding unit included in the current chroma block.

Provided are an image decoding method and apparatus. The image decoding method includes identifying at least two neighboring sub-blocks that have a same motion vector and are adjacent to each other from among a plurality of neighboring sub-blocks adjacent to a current block, determining a representative motion vector and representative location information corresponding to the at least two neighboring sub-blocks, determining a parameter of a model for determining a motion vector based on the representative motion vector and the representative location information, determining a motion vector of a current sub-block included in the current block, based on location information of the current sub-block and the parameter, and predicting the current block based on the motion vector of the current sub-block wherein the representative motion vector is determined based on the same motion vector, and the representative location information indicates coordinates that are determined based on the at least two neighboring sub-blocks.

Provided is a method of determining a gaze direction including obtaining a plurality of image frames by performing decoding based on data acquired by an event camera, determining reflected light point information for each image frame among the plurality of image frames, and determining the gaze direction for each image frame among the plurality of image frames based on the reflected light point information, wherein each image frame among the plurality of image frames includes event data obtained based on a reflected light point signal captured by the event camera, the reflected light point signal being light that is emitted from a light source and is reflected by a corneal surface, and wherein the reflected light point information includes at least one of a reflected light point position and numbers of reflected light points corresponding to a pair of reflected light points obtained based on the event data.

An image sensor includes a substrate with a first pixel group and a second pixel group disposed thereon. The first pixel group includes first and second pixels adjacent in a first direction, and third and fourth pixels adjacent to the first and second pixels in a second direction. The second pixel group, located adjacent to the first pixel group in the second direction, includes fifth and sixth pixels. A first floating diffusion region is electrically connected to the first to fourth pixels, and a second floating diffusion region is electrically connected to the fifth and sixth pixels. Each pixel includes photoelectric conversion elements and transfer transistors connecting the elements to their respective floating diffusion regions. The second pixel group includes a first capacitor, while the first pixel group includes a first reset transistor that connects the first capacitor to the first floating diffusion region, controlled by a first control signal.

In some embodiments, an image sensing device includes a pixel array including a capacitor, a read circuit, and a plurality of pixels including a first and a second photodiode. The image sensing device further includes a driver configured to generate control signals for the plurality of pixels, an analog-to-digital converter (ADC) block configured to generate a digital signal, and a controller configured to control the driver and the ADC block. At least one of the plurality of pixels is configured to sequentially output a first and a second sub-output signal obtained by converting charges accumulated in the first photodiode, a third sub-output signal obtained by converting charges accumulated in the second photodiode, a fourth sub-output signal obtained by converting third charges stored in the capacitor, a first reset signal corresponding to the fourth sub-output signal, and a second reset signal corresponding to the third sub-output signal.

A display apparatus is disclosed. The display apparatus includes a display, a speaker, and a processor configured to acquire location information of the display apparatus inside a modular display apparatus including a plurality of display apparatuses, change an output set value of the speaker based on the location information, and control the speaker to output a sound signal received from an external apparatus based on the changed output set value, wherein the external apparatus includes at least one of another display apparatus adjacent to the display apparatus among the plurality of display apparatuses or a source apparatus.

A method for positioning is disclosed. The method may include receiving, by a user equipment (UE), a threshold configured by a location server, determining, by the UE, a criterion associated with the threshold, activating, by the UE, a positioning model for positioning according to the criterion, monitoring, by the UE, a performance of the positioning model, and reporting, to the location server by the UE, the performance of the positioning model. The method may further be implemented at a network node (e.g., a base station) or a location server, which improves the efficiency of positioning.

A semiconductor device includes a substrate, a gate stacking structure, and a channel structure. The gate stacking structure includes a plurality of interlayer insulating layers and a plurality of gate electrodes alternately stacked on the substrate. The channel structure at least partially penetrates the gate stacking structure and extends in one direction. The channel structure includes a channel layer coupled with the substrate, a ferroelectric layer at least partially surrounding the channel layer and including a ferroelectric material, and a bound charge layer at least partially surrounding the ferroelectric material and including an insulating material. At least one of a conduction band energy level or a valence band energy level of the insulating material is disposed between a conduction band energy level and a valence band energy level of the ferroelectric material.

A resistive memory device including a resistive memory pattern; and a selection element pattern electrically connected to the resistive memory pattern, the selection element pattern including a chalcogenide switching material and at least one metallic material, the chalcogenide switching material including germanium, arsenic, and selenium, and the at least one metallic material including aluminum, strontium, or indium, wherein the selection element pattern includes an inhomogeneous material layer in which content of the at least one metallic material in the selection element pattern is variable according to a position within the selection element pattern.

An integrated circuit device including a plurality of gate stacks disposed on a substrate and including a first gate stack and a second gate stack, a spacer disposed on sidewalls of each of the plurality of gate stacks, a plurality of source/drain areas disposed in an upper portion of the substrate and at sides of the plurality of gate stacks, an active area disposed in the upper portion of the substrate and between adjacent source/drain areas of the plurality of source/drain areas, a channel semiconductor layer disposed between the active area and the second gate stack among the plurality of gate stacks.

A semiconductor device includes: a first source/drain region and a second source/drain region on a first channel structure; a third source/drain region and a fourth source/drain region on a second channel structure; a first backside contact plug recessing the second source/drain region by a first depth from a lower surface of the second source/drain region; and a second backside contact plug recessing the fourth source/drain region by a second depth, smaller than the first depth, from a lower surface of the fourth source/drain region, wherein the second source/drain region comprises a first impurity region comprising a first impurity on an interface with the first backside contact plug, and the fourth source/drain region comprises another first impurity region comprising a second impurity on an interface with the second backside contact plug.

An image sensor includes a pixel isolation structure in a semiconductor substrate. The pixel isolation structure defines a plurality of pixel regions, a photoelectric conversion region in the semiconductor substrate on each of the pixel regions, a floating diffusion region in the semiconductor substrate and spaced apart from the photoelectric conversion region. A transfer gate electrode is disposed between the photoelectric conversion region and the floating diffusion region on each of the pixel regions. A dielectric layer is disposed on the semiconductor substrate and covers the transfer gate electrode. A plurality of active patterns spaced apart from each other is disposed on a top surface of the dielectric layer. A plurality of pixel transistors is disposed on corresponding active patterns. In a plan view, at least one of the active patterns overlaps a portion of the pixel isolation structure.

An image sensor includes a substrate having a first surface and a second surface that are opposite to each other. The substrate including a plurality of unit pixel regions having photoelectric conversion regions and floating diffusion regions disposed adjacent to the first surface. A pixel isolation pattern is disposed in the substrate and is configured to define the plurality of unit pixel regions. An interconnection layer is disposed on the first surface of the substrate. The interconnection layer includes a conductive structure having a connection portion that extends parallel to the first surface of the substrate and is spaced apart from the first surface of the substrate. Contacts extend vertically from the connection portion towards the first surface of the substrate. Each of the contacts are spaced apart from each other with the pixel isolation pattern interposed therebetween. The contacts are coupled to the floating diffusion regions, respectively.