元の名称記録: ASM IP Holding B.V.

Manifold assemblies, reactor systems including manifold assemblies and associated method for supplying a gas mixture to a reaction chamber employing manifold assemblies are disclosed. The manifold assemblies disclosed include a first gas injection port for introducing a first gas into a manifold body and a second gas injection port for introducing a second gas into the manifold body and a plenum for mixing the first gas and the second gas. Reactor systems including manifold assemblies are disclosed and methods for supplying a gas mixture to reaction chamber employing a manifold assembly are disclosed.

In an aspect, disclosed herein are a methods, systems and apparatus for modifying a component surface comprising, contacting the surface, with an laser beam, the surface comprising a semiconductor tool manufacturing component; modifying the surface responsive to the contacting, wherein the modifying the surface comprises forming, by micro-machining, etching, ablating, ionizing, anodizing, oxidizing, texturing, or roughening, or a combination thereof, a functional feature in the surface.

Various embodiments of the present technology may provide a flow control ring disposed between an exhaust plate and a reaction chamber, the flow control ring including a plurality of sections, wherein the plurality of sections consists of a first quarter section, a second quarter section, a third quarter section, and a fourth quarter section, and wherein the second, third, and fourth sections have a first height and the first section has a second height that is greater than the first height.

A showerhead assembly for distributing a gas within a reaction chamber is provided. The showerhead assembly includes a top plate, a gas distribution plate, and a plurality of thermally controllable zones. The gas distribution plate is coupled to the top plate. The gas distribution plate also has a top surface facing the top plate and a bottom surface configured to face a substrate disposed within the reaction chamber. The plurality of thermally controllable zones are fabricated in at least one of the top plate and the gas distribution plate. Methods of controlling thermal profile of showerhead assemblies and methods of making showerhead assemblies are also described.

Provided is a method of improving a control time accuracy while a command signal is transmitted to a substrate processing apparatus from a controller, and a process stability while processing a substrate. A method of forming the film using it comprises inputting process control parameters into a first controller, downloading the process control parameters to a second controller from the first controller, and forming the film on the substrate.

A safety system in substrate processing comprises a substrate processing apparatus configured to process the substrates, the apparatus comprising a chamber and a showerhead, an input line configured to receive a process cooling water (PCW) from an outside PCW source for cooling the substrate processing apparatus, an inlet valve disposed at an entrance of the input line to control the input of the PCW, a drain line configured to gather the PCW from the substrate processing apparatus used for cooling and exhaust the gathered PCW, a plurality of channels configured to connect between the input line and the drain line, and the PCW flows inside of the channels and a safety unit configured to inject a compressed dry air (CDA) into the input line and/or purge the CDA and the PCW from the plurality of channels and the drain line.

Disclosed herein is a method, system and apparatus for forming, by a cyclic process, a dopant concentration gradient in a doped hafnium zirconium oxide (HZO) layer on a substrate, the cyclic process includes, providing the substrate in a reaction chamber, a) pulsing a hafnium precursor(s) into the reaction chamber, where at least a part of the substrate is contacted with the hafnium precursor(s), b) pulsing a zirconium precursor(s) into the reaction chamber, where at least a part of the substrate is contacted with the zirconium precursor(s), c) pulsing an oxygen reactant(s) into the reaction chamber, where at least a part of the substrate is contacted with the oxygen reactant(s), d) pulsing a dopant precursor(s) into the reaction chamber, where at least a part of the substrate is contacted with the dopant precursor(s), and e) purging the reaction chamber.

A method, system and apparatus for depositing an oxide in a recess of a substrate is disclosed and includes a) providing the substrate in a chamber, the substrate including at least one opening to the recess, b) initially pulsing a precursor into the chamber to preferentially chemisorb in a first area, c) pulsing an oxygen species into the chamber to form a first oxide layer in the first area upon contact with the chemisorbed precursor, d) pulsing an inhibitor into the chamber to preferentially deposit an inhibitor layer on the first oxide layer, e) pulsing the precursor into the chamber to chemisorb to a second area, and/or f) pulsing the oxygen species into the chamber to form a second oxide layer in the second area upon contact with the chemisorbed precursor.

Methods and related systems for etching. Embodiments of the present disclosure comprise etching an etchable layer by executing a cyclical etching process comprising a plurality of etching cycles. Ones from the plurality of etching cycles comprise a volatilization reactant pulse that comprises exposing a substrate to a volatilization reactant.

This disclosure relates to a process gas monitoring apparatus, a volatilization vessel, a substrate processing apparatus, and a method for monitoring supply of process gas into a process chamber. The process gas comprises a chemical substance thermally decomposable to form a decomposition product, and the method comprises measuring concentration of the decomposition product in the process gas.

Gas injection systems, reactor systems including gas injection systems, and methods for supplying a process gas to a reaction chamber are disclosed. The gas injection systems disclosed include gas source assemblies coupled to gas distribution assemblies in which an etchant gas and a precursor gas are combined prior to injection into a reaction chamber.

A chamber arrangement includes a chamber body, a substrate support, and an upper heater element array. The chamber body has injection and longitudinally opposite exhaust ends, the substrate support is arranged within the chamber body and supported therein for rotation about a rotation axis, and the upper heater element array is supported above the chamber body and include a laterally-inner first upper linear lamp and a laterally-inner second upper linear lamp. The laterally-inner first upper linear lamp is separated from the rotation axis by a first lateral spacing distance, the laterally-inner second upper linear lamp is separated from the rotation axis by a second lateral spacing distance, and one of the first lateral spacing distance and the second lateral spacing distance is greater than the other of the first lateral spacing distance the second lateral spacing distance. Semiconductor processing systems and material layer deposition methods are also described.

A process module for a process module of a substrate processing system includes a vacuum chamber and a non-vacuum chamber. A substrate support is positioned in the vacuum chamber, is configured to support a substrate incoming into the vacuum chamber, and is coupled to a magnet. A metal component is further positioned to include a motor coil in the non-vacuum chamber. When the motor coil is energized, the motor coil and the magnet interact to generate a magnetic field allowing the substrate support to rotate about a first axis and place the substrate in a desired location. Rotary wafer indexers for process module of substrate processing systems and methods of making substrate indexers are also described.

A chamber arrangement includes a chamber body having a chamber body with an injection end and a longitudinally opposite exhaust end, a substrate support arranged within the chamber body and supported for rotation therein rotation about a rotation axis, and an upper reflector supported above the chamber body and defining therein a laterally-outer first arcuate recess and a laterally-outer second arcuate recess. The laterally-outer first arcuate recess is separated from the rotation axis by a first arcuate recess lateral offset, the laterally outer second arcuate recess separated from the rotation axis by a second arcuate recess lateral offset, and the second arcuate recess lateral offset greater than or less than the first arcuate recess lateral offset. Semiconductor processing systems and material layer deposition methods are also described.